NVMFD5873NLT1G Bei (USD) [85671pcs Hisa]
- 1 pcs$0.45641
- 1,500 pcs$0.41493
- Nambari ya Sehemu:
- NVMFD5873NLT1G
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- MOSFET 2N-CH 60V 10A SO8FL.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor NVMFD5873NLT1G electronic components. NVMFD5873NLT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5873NLT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFD5873NLT1G Sifa za Bidhaa
Nambari ya Sehemu :
NVMFD5873NLT1G
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET 2N-CH 60V 10A SO8FL
Mfululizo :
-
Hali ya Sehemu :
Not For New Designs
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A
Njia ya Kutumia (Max) @ Id, Vgs :
13 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
30.5nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1560pF @ 25V
Nguvu - Max :
3.1W
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerTDFN
Kifurushi cha Kifaa cha Mtoaji :
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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