Vishay Siliconix - SI3585DV-T1-E3

KEY Part #: K6524448

[3828pcs Hisa]


    Nambari ya Sehemu:
    SI3585DV-T1-E3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N/P-CH 20V 2A 6-TSOP.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Arrays, Thyristors - DIAC, SIDAC and Moduli za Dereva za Nguvu ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SI3585DV-T1-E3 electronic components. SI3585DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3585DV-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3585DV-T1-E3 Sifa za Bidhaa

    Nambari ya Sehemu : SI3585DV-T1-E3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N/P-CH 20V 2A 6-TSOP
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N and P-Channel
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 20V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2A, 1.5A
    Njia ya Kutumia (Max) @ Id, Vgs : 125 mOhm @ 2.4A, 4.5V
    Vgs (th) (Max) @ Id : 600mV @ 250µA (Min)
    Malango ya Lango (Qg) (Max) @ Vgs : 3.2nC @ 4.5V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : -
    Nguvu - Max : 830mW
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : SOT-23-6 Thin, TSOT-23-6
    Kifurushi cha Kifaa cha Mtoaji : 6-TSOP