SIA907EDJT-T1-GE3 Bei (USD) [431769pcs Hisa]
- 1 pcs$0.08567
- 3,000 pcs$0.08092
- Nambari ya Sehemu:
- SIA907EDJT-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2P-CH 20V 4.5A SC-70-6L.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Viwango - RF, Transistors - Kusudi Maalum, Thyristors - TRIAC, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Arrays and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIA907EDJT-T1-GE3 electronic components. SIA907EDJT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA907EDJT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA907EDJT-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIA907EDJT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2P-CH 20V 4.5A SC-70-6L
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 P-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.5A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
57 mOhm @ 3.6A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
23nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
7.8W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® SC-70-6 Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SC-70-6 Dual
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