SIA929DJ-T1-GE3 Bei (USD) [340585pcs Hisa]
- 1 pcs$0.10860
- 3,000 pcs$0.10219
- Nambari ya Sehemu:
- SIA929DJ-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2P-CH 30V 4.5A SC70-6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moja, Viwango - Zener - Moja, Thyristors - SCR, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIA929DJ-T1-GE3 electronic components. SIA929DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA929DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA929DJ-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIA929DJ-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2P-CH 30V 4.5A SC70-6
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 P-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.5A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
64 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
21nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
575pF @ 15V
Nguvu - Max :
7.8W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® SC-70-6 Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SC-70-6 Dual
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