BSC886N03LSGATMA1 Bei (USD) [369153pcs Hisa]
- 1 pcs$0.10020
- 5,000 pcs$0.09620
- Nambari ya Sehemu:
- BSC886N03LSGATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 30V 65A TDSON-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Moja, Thyristors - SCR, Thyristors - SCRs - Moduli, Transistors - JFETs and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSC886N03LSGATMA1 electronic components. BSC886N03LSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC886N03LSGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC886N03LSGATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSC886N03LSGATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 30V 65A TDSON-8
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A (Ta), 65A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
6 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2100pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.5W (Ta), 39W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TDSON-8
Kifurushi / Kesi :
8-PowerTDFN
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