Infineon Technologies - AUIRF1018E

KEY Part #: K6418700

AUIRF1018E Bei (USD) [73688pcs Hisa]

  • 1 pcs$0.53063
  • 1,000 pcs$0.48681

Nambari ya Sehemu:
AUIRF1018E
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 60V 79A TO-220AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - Rectifiers - Arrays, Thyristors - SCR, Viwango - RF, Transistors - JFETs, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Infineon Technologies AUIRF1018E electronic components. AUIRF1018E can be shipped within 24 hours after order. If you have any demands for AUIRF1018E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRF1018E Sifa za Bidhaa

Nambari ya Sehemu : AUIRF1018E
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 60V 79A TO-220AB
Mfululizo : HEXFET®
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 79A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : -
Njia ya Kutumia (Max) @ Id, Vgs : 8.4 mOhm @ 47A, 10V
Vgs (th) (Max) @ Id : 4V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs : 69nC @ 10V
Vgs (Max) : -
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2290pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 110W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220AB
Kifurushi / Kesi : TO-220-3