IPW60R055CFD7XKSA1 Bei (USD) [8261pcs Hisa]
- 1 pcs$4.98872
- Nambari ya Sehemu:
- IPW60R055CFD7XKSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- HIGH POWERNEW.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moja, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Arrays and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPW60R055CFD7XKSA1 electronic components. IPW60R055CFD7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R055CFD7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW60R055CFD7XKSA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPW60R055CFD7XKSA1
Mzalishaji :
Infineon Technologies
Maelezo :
HIGH POWERNEW
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
38A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
55 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 900µA
Malango ya Lango (Qg) (Max) @ Vgs :
79nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3194pF @ 400V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
178W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO247-3
Kifurushi / Kesi :
TO-247-3
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