Infineon Technologies - BSO612CVGHUMA1

KEY Part #: K6525342

BSO612CVGHUMA1 Bei (USD) [210131pcs Hisa]

  • 1 pcs$0.17602
  • 2,500 pcs$0.16896

Nambari ya Sehemu:
BSO612CVGHUMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N/P-CH 60V 2A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - RF, Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSO612CVGHUMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSO612CVGHUMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N/P-CH 60V 2A 8-SOIC
Mfululizo : SIPMOS®
Hali ya Sehemu : Active
Aina ya FET : N and P-Channel
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A, 2A
Njia ya Kutumia (Max) @ Id, Vgs : 120 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 4V @ 20µA
Malango ya Lango (Qg) (Max) @ Vgs : 15.5nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 340pF @ 25V
Nguvu - Max : 2W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : PG-DSO-8