SI1029X-T1-GE3 Bei (USD) [471021pcs Hisa]
- 1 pcs$0.07853
- 3,000 pcs$0.07418
- Nambari ya Sehemu:
- SI1029X-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N/P-CH 60V SC89-6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Viwango - RF, Viwango - Zener - Moja, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI1029X-T1-GE3 electronic components. SI1029X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1029X-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1029X-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI1029X-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N/P-CH 60V SC89-6
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N and P-Channel
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
305mA, 190mA
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
0.75nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
30pF @ 25V
Nguvu - Max :
250mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji :
SC-89-6
Habari mpya kabisa
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