SIZ200DT-T1-GE3 Bei (USD) [192003pcs Hisa]
- 1 pcs$0.19264
- Nambari ya Sehemu:
- SIZ200DT-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH DUAL 30V.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers and Transistors - Bipolar (BJT) - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIZ200DT-T1-GE3 electronic components. SIZ200DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ200DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ200DT-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIZ200DT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH DUAL 30V
Mfululizo :
TrenchFET® Gen IV
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
28nC @ 10V, 30nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1510pF @ 15V, 1600pF @ 15V
Nguvu - Max :
4.3W (Ta), 33W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji :
8-PowerPair® (3.3x3.3)
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