Vishay Siliconix - SIZ918DT-T1-GE3

KEY Part #: K6522043

SIZ918DT-T1-GE3 Bei (USD) [158402pcs Hisa]

  • 1 pcs$0.23350
  • 3,000 pcs$0.21927

Nambari ya Sehemu:
SIZ918DT-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2N-CH 30V 16A POWERPAIR.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF, Viwango - RF, Viwango - Rectifiers - Moja, Viwango - Bridge Rectifiers, Thyristors - TRIAC, Transistors - Kusudi Maalum and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIZ918DT-T1-GE3 electronic components. SIZ918DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ918DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZ918DT-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIZ918DT-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2N-CH 30V 16A POWERPAIR
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Half Bridge)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 16A, 28A
Njia ya Kutumia (Max) @ Id, Vgs : 12 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 21nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 790pF @ 15V
Nguvu - Max : 29W, 100W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji : 8-PowerPair® (6x5)