Nambari ya Sehemu :
BSM180D12P2C101
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET 2N-CH 1200V 180A MODULE
Aina ya FET :
2 N-Channel (Half Bridge)
Makala ya FET :
Silicon Carbide (SiC)
Kukata kwa Voltage Voltage (Vdss) :
1200V (1.2kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
204A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Malango ya Lango (Qg) (Max) @ Vgs :
-
Uingizwaji uwezo (Ciss) (Max) @ Vds :
23000pF @ 10V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Kifurushi / Kesi :
Module
Kifurushi cha Kifaa cha Mtoaji :
Module