Infineon Technologies - IPD90N04S4L04ATMA1

KEY Part #: K6420573

IPD90N04S4L04ATMA1 Bei (USD) [213528pcs Hisa]

  • 1 pcs$0.17322
  • 2,500 pcs$0.15891

Nambari ya Sehemu:
IPD90N04S4L04ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 40V 90A TO252-3-313.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Transistors - IGBTs - Moja, Thyristors - SCR, Viwango - RF, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD90N04S4L04ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPD90N04S4L04ATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 40V 90A TO252-3-313
Mfululizo : Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 90A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.8 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 35µA
Malango ya Lango (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : +20V, -16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4690pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 71W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3-313
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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