IXFH23N80Q Bei (USD) [6887pcs Hisa]
- 1 pcs$6.61565
- 30 pcs$6.58274
- Nambari ya Sehemu:
- IXFH23N80Q
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 800V 23A TO-247.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Kusudi Maalum and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in IXYS IXFH23N80Q electronic components. IXFH23N80Q can be shipped within 24 hours after order. If you have any demands for IXFH23N80Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH23N80Q Sifa za Bidhaa
Nambari ya Sehemu :
IXFH23N80Q
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 800V 23A TO-247
Mfululizo :
HiPerFET™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
23A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
420 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 3mA
Malango ya Lango (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4900pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
500W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247AD (IXFH)
Kifurushi / Kesi :
TO-247-3
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