TJ8S06M3L(T6L1,NQ) Bei (USD) [202426pcs Hisa]
- 1 pcs$0.20200
- 2,000 pcs$0.20099
- Nambari ya Sehemu:
- TJ8S06M3L(T6L1,NQ)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET P-CH 60V 8A DPAK-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TJ8S06M3L(T6L1,NQ) electronic components. TJ8S06M3L(T6L1,NQ) can be shipped within 24 hours after order. If you have any demands for TJ8S06M3L(T6L1,NQ), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TJ8S06M3L(T6L1,NQ) Sifa za Bidhaa
Nambari ya Sehemu :
TJ8S06M3L(T6L1,NQ)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET P-CH 60V 8A DPAK-3
Mfululizo :
U-MOSVI
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
104 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
+10V, -20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
890pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
27W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DPAK+
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
Habari mpya kabisa
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