Nambari ya Sehemu :
TK10S04K3L(T6L1,NQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 40V 10A DPAK-3
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
28 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
10nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
410pF @ 10V
Kuondoa Nguvu (Max) :
25W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DPAK+
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63