[13055pcs Hisa]
- Nambari ya Sehemu:
- IRF7807VD1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 30V 8.3A 8-SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Moja, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF7807VD1 electronic components. IRF7807VD1 can be shipped within 24 hours after order. If you have any demands for IRF7807VD1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7807VD1 Sifa za Bidhaa
Nambari ya Sehemu :
IRF7807VD1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 30V 8.3A 8-SOIC
Mfululizo :
FETKY™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8.3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
25 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
14nC @ 4.5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
2.5W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SO
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
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