Vishay Siliconix - SI4913DY-T1-GE3

KEY Part #: K6524088

[3949pcs Hisa]


    Nambari ya Sehemu:
    SI4913DY-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET 2P-CH 20V 7.1A 8-SOIC.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR, Viwango - Zener - Moja, Transistors - JFETs, Viwango - Rectifiers - Arrays and Thyristors - DIAC, SIDAC ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SI4913DY-T1-GE3 electronic components. SI4913DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4913DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4913DY-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SI4913DY-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET 2P-CH 20V 7.1A 8-SOIC
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 P-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 20V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7.1A
    Njia ya Kutumia (Max) @ Id, Vgs : 15 mOhm @ 9.4A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 500µA
    Malango ya Lango (Qg) (Max) @ Vgs : 65nC @ 4.5V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : -
    Nguvu - Max : 1.1W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
    Kifurushi cha Kifaa cha Mtoaji : 8-SO