Infineon Technologies - BSO303PNTMA1

KEY Part #: K6524514

[3807pcs Hisa]


    Nambari ya Sehemu:
    BSO303PNTMA1
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET 2P-CH 30V 8.2A 8DSO.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF and Thyristors - DIAC, SIDAC ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies BSO303PNTMA1 electronic components. BSO303PNTMA1 can be shipped within 24 hours after order. If you have any demands for BSO303PNTMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSO303PNTMA1 Sifa za Bidhaa

    Nambari ya Sehemu : BSO303PNTMA1
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET 2P-CH 30V 8.2A 8DSO
    Mfululizo : OptiMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 P-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8.2A
    Njia ya Kutumia (Max) @ Id, Vgs : 21 mOhm @ 8.2A, 10V
    Vgs (th) (Max) @ Id : 2V @ 100µA
    Malango ya Lango (Qg) (Max) @ Vgs : 72.5nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 1761pF @ 25V
    Nguvu - Max : 2W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
    Kifurushi cha Kifaa cha Mtoaji : P-DSO-8