SI8900EDB-T2-E1 Bei (USD) [54394pcs Hisa]
- 1 pcs$0.71884
- 3,000 pcs$0.67285
- Nambari ya Sehemu:
- SI8900EDB-T2-E1
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 20V 5.4A 10-MFP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Thyristors - SCR, Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI8900EDB-T2-E1 electronic components. SI8900EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8900EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8900EDB-T2-E1 Sifa za Bidhaa
Nambari ya Sehemu :
SI8900EDB-T2-E1
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 20V 5.4A 10-MFP
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual) Common Drain
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.4A
Njia ya Kutumia (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1V @ 1.1mA
Malango ya Lango (Qg) (Max) @ Vgs :
-
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
1W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
10-UFBGA, CSPBGA
Kifurushi cha Kifaa cha Mtoaji :
10-Micro Foot™ CSP (2x5)
Habari mpya kabisa
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