Vishay Siliconix - SI1902CDL-T1-GE3

KEY Part #: K6522747

SI1902CDL-T1-GE3 Bei (USD) [659949pcs Hisa]

  • 1 pcs$0.05605
  • 3,000 pcs$0.05312

Nambari ya Sehemu:
SI1902CDL-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2N-CH 20V 1.1A SC-70-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moja, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCRs - Moduli and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI1902CDL-T1-GE3 electronic components. SI1902CDL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1902CDL-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1902CDL-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI1902CDL-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2N-CH 20V 1.1A SC-70-6
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.1A
Njia ya Kutumia (Max) @ Id, Vgs : 235 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 3nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 62pF @ 10V
Nguvu - Max : 420mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji : SC-70-6 (SOT-363)