Diodes Incorporated - DMN3013LDG-7

KEY Part #: K6522310

DMN3013LDG-7 Bei (USD) [235979pcs Hisa]

  • 1 pcs$0.15674

Nambari ya Sehemu:
DMN3013LDG-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET BVDSS 25V-30V POWERDI333.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Viwango - RF and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN3013LDG-7 electronic components. DMN3013LDG-7 can be shipped within 24 hours after order. If you have any demands for DMN3013LDG-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3013LDG-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN3013LDG-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET BVDSS 25V-30V POWERDI333
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.5A (Ta), 15A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 14.3 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 5.7nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 600pF @ 15V
Nguvu - Max : 2.16W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerLDFN
Kifurushi cha Kifaa cha Mtoaji : PowerDI3333-8

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