Microsemi Corporation - APTM100VDA35T3G

KEY Part #: K6523414

[4676pcs Hisa]


    Nambari ya Sehemu:
    APTM100VDA35T3G
    Mzalishaji:
    Microsemi Corporation
    Maelezo ya kina:
    MOSFET 2N-CH 1000V 22A SP3.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCRs - Moduli, Thyristors - TRIAC and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
    Faida ya Ushindani:
    We specialize in Microsemi Corporation APTM100VDA35T3G electronic components. APTM100VDA35T3G can be shipped within 24 hours after order. If you have any demands for APTM100VDA35T3G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTM100VDA35T3G Sifa za Bidhaa

    Nambari ya Sehemu : APTM100VDA35T3G
    Mzalishaji : Microsemi Corporation
    Maelezo : MOSFET 2N-CH 1000V 22A SP3
    Mfululizo : POWER MOS 7®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Standard
    Kukata kwa Voltage Voltage (Vdss) : 1000V (1kV)
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 22A
    Njia ya Kutumia (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
    Vgs (th) (Max) @ Id : 5V @ 2.5mA
    Malango ya Lango (Qg) (Max) @ Vgs : 186nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 5200pF @ 25V
    Nguvu - Max : 390W
    Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
    Aina ya Kuinua : Chassis Mount
    Kifurushi / Kesi : SP3
    Kifurushi cha Kifaa cha Mtoaji : SP3