PHKD3NQ10T,518 Bei (USD) [4147pcs Hisa]
- 10,000 pcs$0.23477
- Nambari ya Sehemu:
- PHKD3NQ10T,518
- Mzalishaji:
- Nexperia USA Inc.
- Maelezo ya kina:
- MOSFET 2N-CH 100V 3A 8SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Thyristors - SCRs - Moduli, Transistors - Kusudi Maalum, Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in Nexperia USA Inc. PHKD3NQ10T,518 electronic components. PHKD3NQ10T,518 can be shipped within 24 hours after order. If you have any demands for PHKD3NQ10T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHKD3NQ10T,518 Sifa za Bidhaa
Nambari ya Sehemu :
PHKD3NQ10T,518
Mzalishaji :
Nexperia USA Inc.
Maelezo :
MOSFET 2N-CH 100V 3A 8SOIC
Mfululizo :
TrenchMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3A
Njia ya Kutumia (Max) @ Id, Vgs :
90 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
21nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
633pF @ 20V
Nguvu - Max :
2W
Joto la Kufanya kazi :
-65°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO
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