DMN2005UFG-13 Bei (USD) [340920pcs Hisa]
- 1 pcs$0.10849
- 3,000 pcs$0.09710
- Nambari ya Sehemu:
- DMN2005UFG-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 20V 18.1A POWERDI-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Arrays, Thyristors - SCRs - Moduli, Thyristors - DIAC, SIDAC and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN2005UFG-13 electronic components. DMN2005UFG-13 can be shipped within 24 hours after order. If you have any demands for DMN2005UFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2005UFG-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN2005UFG-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 20V 18.1A POWERDI-8
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
18.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
4.6 mOhm @ 13.5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
164nC @ 10V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
6495pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.05W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerDI3333-8
Kifurushi / Kesi :
8-PowerWDFN
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