IXTY1R4N100P Bei (USD) [49877pcs Hisa]
- 1 pcs$0.90605
- 70 pcs$0.90154
- Nambari ya Sehemu:
- IXTY1R4N100P
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 1000V 1.4A TO-252.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in IXYS IXTY1R4N100P electronic components. IXTY1R4N100P can be shipped within 24 hours after order. If you have any demands for IXTY1R4N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY1R4N100P Sifa za Bidhaa
Nambari ya Sehemu :
IXTY1R4N100P
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 1000V 1.4A TO-252
Mfululizo :
Polar™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
11 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 50µA
Malango ya Lango (Qg) (Max) @ Vgs :
17.8nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
450pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
63W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-252, (D-Pak)
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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