DMN63D8LDW-13 Bei (USD) [2016851pcs Hisa]
- 1 pcs$0.01834
- 10,000 pcs$0.01657
- Nambari ya Sehemu:
- DMN63D8LDW-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 30V 0.22A SOT363.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - FET, MOSFETs - RF, Thyristors - TRIAC, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Arrays and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN63D8LDW-13 electronic components. DMN63D8LDW-13 can be shipped within 24 hours after order. If you have any demands for DMN63D8LDW-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN63D8LDW-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN63D8LDW-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 30V 0.22A SOT363
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
220mA
Njia ya Kutumia (Max) @ Id, Vgs :
2.8 Ohm @ 250mA, 10V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
870nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
22pF @ 25V
Nguvu - Max :
300mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji :
SOT-363
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