Infineon Technologies - IRFH7911TR2PBF

KEY Part #: K6524120

[3937pcs Hisa]


    Nambari ya Sehemu:
    IRFH7911TR2PBF
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET 2N-CH 30V 13A/28A PQFN.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Transistors - JFETs, Transistors - Kusudi Maalum, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Moja and Viwango - Zener - Arrays ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies IRFH7911TR2PBF electronic components. IRFH7911TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH7911TR2PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFH7911TR2PBF Sifa za Bidhaa

    Nambari ya Sehemu : IRFH7911TR2PBF
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET 2N-CH 30V 13A/28A PQFN
    Mfululizo : HEXFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 13A, 28A
    Njia ya Kutumia (Max) @ Id, Vgs : 8.6 mOhm @ 12A, 10V
    Vgs (th) (Max) @ Id : 2.35V @ 25µA
    Malango ya Lango (Qg) (Max) @ Vgs : 12nC @ 4.5V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 1060pF @ 15V
    Nguvu - Max : 2.4W, 3.4W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 18-PowerVQFN
    Kifurushi cha Kifaa cha Mtoaji : PQFN (5x6)