Vishay Siliconix - SQJ956EP-T1_GE3

KEY Part #: K6523123

SQJ956EP-T1_GE3 Bei (USD) [194426pcs Hisa]

  • 1 pcs$0.19024

Nambari ya Sehemu:
SQJ956EP-T1_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2 N-CH 60V POWERPAK SO8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - Zener - Arrays, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Moja and Viwango - RF ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SQJ956EP-T1_GE3 electronic components. SQJ956EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ956EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ956EP-T1_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQJ956EP-T1_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2 N-CH 60V POWERPAK SO8
Mfululizo : Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 23A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 26.7 mOhm @ 5.2A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 30nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1395pF @ 30V
Nguvu - Max : 34W
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : PowerPAK® SO-8 Dual
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SO-8 Dual