[3907pcs Hisa]
- Nambari ya Sehemu:
- SI6963BDQ-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2P-CH 20V 3.4A 8-TSSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI6963BDQ-T1-GE3 electronic components. SI6963BDQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6963BDQ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6963BDQ-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI6963BDQ-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2P-CH 20V 3.4A 8-TSSOP
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 P-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.4A
Njia ya Kutumia (Max) @ Id, Vgs :
45 mOhm @ 3.9A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
830mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-TSSOP (0.173", 4.40mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-TSSOP
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