[1586pcs Hisa]
- Nambari ya Sehemu:
- NP80N055NDG-S18-AY
- Mzalishaji:
- Renesas Electronics America
- Maelezo ya kina:
- MOSFET N-CH 55V 80A TO-262.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Moduli za Dereva za Nguvu, Viwango - Zener - Arrays, Transistors - JFETs, Thyristors - SCRs - Moduli and Transistors - Bipolar (BJT) - Moja ...
- Faida ya Ushindani:
- We specialize in Renesas Electronics America NP80N055NDG-S18-AY electronic components. NP80N055NDG-S18-AY can be shipped within 24 hours after order. If you have any demands for NP80N055NDG-S18-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP80N055NDG-S18-AY Sifa za Bidhaa
Nambari ya Sehemu :
NP80N055NDG-S18-AY
Mzalishaji :
Renesas Electronics America
Maelezo :
MOSFET N-CH 55V 80A TO-262
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
6.9 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
135nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
6900pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.8W (Ta), 115W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-262
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA
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