Nambari ya Sehemu :
TPC6012(TE85L,F,M)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 20V 6A VS6
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
20 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
9nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
630pF @ 10V
Kuondoa Nguvu (Max) :
700mW (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
VS-6 (2.9x2.8)
Kifurushi / Kesi :
SOT-23-6 Thin, TSOT-23-6