Texas Instruments - CSD19531Q5A

KEY Part #: K6415719

CSD19531Q5A Bei (USD) [122851pcs Hisa]

  • 1 pcs$0.30107
  • 2,500 pcs$0.29734

Nambari ya Sehemu:
CSD19531Q5A
Mzalishaji:
Texas Instruments
Maelezo ya kina:
MOSFET N-CH 100V 100A 8SON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Viwango - RF, Thyristors - TRIAC and Viwango - Zener - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CSD19531Q5A Sifa za Bidhaa

Nambari ya Sehemu : CSD19531Q5A
Mzalishaji : Texas Instruments
Maelezo : MOSFET N-CH 100V 100A 8SON
Mfululizo : NexFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 6.4 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 3.3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 48nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3870pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.3W (Ta), 125W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-VSONP (5x6)
Kifurushi / Kesi : 8-PowerTDFN

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