FDD86113LZ Bei (USD) [159974pcs Hisa]
- 1 pcs$0.23121
- 2,500 pcs$0.22536
- Nambari ya Sehemu:
- FDD86113LZ
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 100V 4.2A DPAK-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Ushirikiano uliopangwa, Viwango - RF, Viwango - Rectifiers - Arrays, Thyristors - TRIAC, Thyristors - SCRs - Moduli, Thyristors - SCR and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor FDD86113LZ electronic components. FDD86113LZ can be shipped within 24 hours after order. If you have any demands for FDD86113LZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD86113LZ Sifa za Bidhaa
Nambari ya Sehemu :
FDD86113LZ
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 100V 4.2A DPAK-3
Mfululizo :
PowerTrench®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.2A (Ta), 5.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
104 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
6nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
285pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.1W (Ta), 29W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D-PAK (TO-252)
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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