Vishay Siliconix - SQJB60EP-T1_GE3

KEY Part #: K6525275

SQJB60EP-T1_GE3 Bei (USD) [164478pcs Hisa]

  • 1 pcs$0.22488
  • 3,000 pcs$0.19003

Nambari ya Sehemu:
SQJB60EP-T1_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2 N-CH 60V POWERPAK SO8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Arrays, Moduli za Dereva za Nguvu, Viwango - RF, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SQJB60EP-T1_GE3 electronic components. SQJB60EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB60EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJB60EP-T1_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQJB60EP-T1_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2 N-CH 60V POWERPAK SO8
Mfululizo : Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 30A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 30nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1600pF @ 25V
Nguvu - Max : 48W
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : PowerPAK® SO-8 Dual
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SO-8 Dual