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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FQD2N80TM

ON Semiconductor - FQD2N80TM

KEY Part #: K6403377

FQD2N80TM Bei (USD) [172554pcs Hisa]

  • 1 pcs$0.21435
  • 2,500 pcs$0.19661
Nambari ya Sehemu:
FQD2N80TM
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 800V 1.8A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja, Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in ON Semiconductor FQD2N80TM electronic components. FQD2N80TM can be shipped within 24 hours after order. If you have any demands for FQD2N80TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD2N80TM Sifa za Bidhaa

Nambari ya Sehemu : FQD2N80TM
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 800V 1.8A DPAK
Mfululizo : QFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 6.3 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 550pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 50W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D-Pak
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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