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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FDD306P

ON Semiconductor - FDD306P

KEY Part #: K6403321

FDD306P Bei (USD) [263402pcs Hisa]

  • 1 pcs$0.14112
  • 2,500 pcs$0.14042
Nambari ya Sehemu:
FDD306P
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET P-CH 12V 6.7A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - SCRs - Moduli, Viwango - Zener - Arrays, Viwango - Rectifiers - Arrays, Viwango - Rectifiers - Moja, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Arrays and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDD306P electronic components. FDD306P can be shipped within 24 hours after order. If you have any demands for FDD306P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD306P Sifa za Bidhaa

Nambari ya Sehemu : FDD306P
Mzalishaji : ON Semiconductor
Maelezo : MOSFET P-CH 12V 6.7A DPAK
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 28 mOhm @ 6.7A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 21nC @ 4.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1290pF @ 6V
Makala ya FET : -
Kuondoa Nguvu (Max) : 52W (Ta)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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