CSD23202W10 Bei (USD) [635334pcs Hisa]
- 1 pcs$0.05822
- 3,000 pcs$0.05260
- Nambari ya Sehemu:
- CSD23202W10
- Mzalishaji:
- Texas Instruments
- Maelezo ya kina:
- MOSFET P-CH 12V 2.2A 4DSBGA.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Arrays, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Texas Instruments CSD23202W10 electronic components. CSD23202W10 can be shipped within 24 hours after order. If you have any demands for CSD23202W10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD23202W10 Sifa za Bidhaa
Nambari ya Sehemu :
CSD23202W10
Mzalishaji :
Texas Instruments
Maelezo :
MOSFET P-CH 12V 2.2A 4DSBGA
Mfululizo :
NexFET™
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
53 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
3.8nC @ 4.5V
Vgs (Max) :
-6V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
512pF @ 6V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
4-DSBGA (1x1)
Kifurushi / Kesi :
4-UFBGA, DSBGA
Habari mpya kabisa
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