IXYS - IXFH35N30

KEY Part #: K6415086

[8352pcs Hisa]


    Nambari ya Sehemu:
    IXFH35N30
    Mzalishaji:
    IXYS
    Maelezo ya kina:
    MOSFET N-CH 300V 35A TO-247AD.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Ushirikiano uliopangwa and Viwango - Zener - Moja ...
    Faida ya Ushindani:
    We specialize in IXYS IXFH35N30 electronic components. IXFH35N30 can be shipped within 24 hours after order. If you have any demands for IXFH35N30, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFH35N30 Sifa za Bidhaa

    Nambari ya Sehemu : IXFH35N30
    Mzalishaji : IXYS
    Maelezo : MOSFET N-CH 300V 35A TO-247AD
    Mfululizo : HiPerFET™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 300V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 35A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 100 mOhm @ 500mA, 10V
    Vgs (th) (Max) @ Id : 4V @ 4mA
    Malango ya Lango (Qg) (Max) @ Vgs : 200nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 4800pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 300W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-247AD (IXFH)
    Kifurushi / Kesi : TO-247-3

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