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  1. Nyumbani
  2. Bidhaa
  3. DRAM
  4. DDR3
  5. K4B4G1646E-BCK0

Samsung Semiconductor - K4B4G1646E-BCK0

KEY Part #: K7359699

[18472pcs Hisa]

    Nambari ya Sehemu:
    K4B4G1646E-BCK0
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: LPDDR5, HBM Flarebolt, LPDDR3, GDDR6, HBM Aquabolt, SLC Nand, LPDDR4X and LPDDR4 ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4B4G1646E-BCK0 electronic components. K4B4G1646E-BCK0 can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BCK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BCK0 Sifa za Bidhaa

    Nambari ya Sehemu : K4B4G1646E-BCK0
    Mzalishaji : Samsung Semiconductor
    Maelezo : 4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    Mfululizo : DDR3
    Density : 4 Gb
    Org. : 512M x 8
    kasi : 1600 Mbps
    voltage : 1.5 V
    Temp. : 0 ~ 85 °C
    mfuko : 96FBGA
    Bidhaa Hali : Mass Production

    Habari mpya kabisa

    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Automotive Driven by Small Packages Under the Hood
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Evolving Mobile Solutions: Samsung at MWC 2018
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Inside the building blocks of the 5G future
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    How Will 5G Impact on Memory?
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
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      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

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      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    Sehemu za Moto