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  1. Nyumbani
  2. Bidhaa
  3. DRAM
  4. DDR3
  5. K4B2G0846F-BYNB

Samsung Semiconductor - K4B2G0846F-BYNB

KEY Part #: K7359656

[20824pcs Hisa]

    Nambari ya Sehemu:
    K4B2G0846F-BYNB
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: LPDDR4X, GDDR6, GDDR5, DDR3, DDR4, LPDDR5, LPDDR4 and HBM Flarebolt ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4B2G0846F-BYNB electronic components. K4B2G0846F-BYNB can be shipped within 24 hours after order. If you have any demands for K4B2G0846F-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G0846F-BYNB Sifa za Bidhaa

    Nambari ya Sehemu : K4B2G0846F-BYNB
    Mzalishaji : Samsung Semiconductor
    Maelezo : 2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Mfululizo : DDR3
    Density : 2 Gb
    Org. : 256M x 8
    kasi : 2133 Mbps
    voltage : 1.35 V
    Temp. : 0 ~ 85 °C
    mfuko : 78FBGA
    Bidhaa Hali : Mass Production

    Habari mpya kabisa

    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Speed for the next generation of mobile devices
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
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