Samsung Semiconductor - K4B4G1646E-BYMA

KEY Part #: K7359703

[19442pcs Hisa]


    Nambari ya Sehemu:
    K4B4G1646E-BYMA
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: HBM Flarebolt, LPDDR4, GDDR5, LPDDR3, GDDR6, DDR4, SLC Nand and HBM Aquabolt ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4B4G1646E-BYMA electronic components. K4B4G1646E-BYMA can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BYMA Sifa za Bidhaa

    Nambari ya Sehemu : K4B4G1646E-BYMA
    Mzalishaji : Samsung Semiconductor
    Maelezo : 4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Mfululizo : DDR3
    Density : 4 Gb
    Org. : 512M x 8
    kasi : 1866 Mbps
    voltage : 1.35 V
    Temp. : 0 ~ 85 °C
    mfuko : 96FBGA
    Bidhaa Hali : Mass Production

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