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  1. Nyumbani
  2. Bidhaa
  3. DRAM
  4. DDR3
  5. K4B4G0846D-BYH9

Samsung Semiconductor - K4B4G0846D-BYH9

KEY Part #: K7359673

[17624pcs Hisa]

    Nambari ya Sehemu:
    K4B4G0846D-BYH9
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: DDR3, HBM Flarebolt, LPDDR5, HBM Aquabolt, SLC Nand, DDR4, GDDR6 and GDDR5 ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4B4G0846D-BYH9 electronic components. K4B4G0846D-BYH9 can be shipped within 24 hours after order. If you have any demands for K4B4G0846D-BYH9, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846D-BYH9 Sifa za Bidhaa

    Nambari ya Sehemu : K4B4G0846D-BYH9
    Mzalishaji : Samsung Semiconductor
    Maelezo : 4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Mfululizo : DDR3
    Density : 4 Gb
    Org. : 512M x 8
    kasi : 1333 Mbps
    voltage : 1.35 V
    Temp. : 0 ~ 85 °C
    mfuko : 78FBGA
    Bidhaa Hali : Mass Production

    Habari mpya kabisa

    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Mission Peak Reference Server System for NGSFF SSD
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Bringing Artificial Intelligence to Devices Everywhere
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