[13147pcs Hisa]
- Nambari ya Sehemu:
- IXFN66N50Q2
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 500V 66A SOT-227B.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Arrays and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in IXYS IXFN66N50Q2 electronic components. IXFN66N50Q2 can be shipped within 24 hours after order. If you have any demands for IXFN66N50Q2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN66N50Q2 Sifa za Bidhaa
Nambari ya Sehemu :
IXFN66N50Q2
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 500V 66A SOT-227B
Mfululizo :
HiPerFET™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
500V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
66A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
80 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 8mA
Malango ya Lango (Qg) (Max) @ Vgs :
199nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
6800pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
735W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-227B
Kifurushi / Kesi :
SOT-227-4, miniBLOC
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