Infineon Technologies - IRF5802TR

KEY Part #: K6413387

[13117pcs Hisa]


    Nambari ya Sehemu:
    IRF5802TR
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET N-CH 150V 0.9A 6-TSOP.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Viwango - Zener - Moja and Viwango - Rectifiers - Moja ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies IRF5802TR electronic components. IRF5802TR can be shipped within 24 hours after order. If you have any demands for IRF5802TR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF5802TR Sifa za Bidhaa

    Nambari ya Sehemu : IRF5802TR
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET N-CH 150V 0.9A 6-TSOP
    Mfululizo : HEXFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 150V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 900mA (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 1.2 Ohm @ 540mA, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 6.8nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 88pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 2W (Ta)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : Micro6™(TSOP-6)
    Kifurushi / Kesi : SOT-23-6 Thin, TSOT-23-6

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