DMN61D9UW-7 Bei (USD) [1489430pcs Hisa]
- 1 pcs$0.02483
- 3,000 pcs$0.02301
- Nambari ya Sehemu:
- DMN61D9UW-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 60V 0.34A.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moja, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN61D9UW-7 electronic components. DMN61D9UW-7 can be shipped within 24 hours after order. If you have any demands for DMN61D9UW-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D9UW-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMN61D9UW-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 60V 0.34A
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
340mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 5V
Njia ya Kutumia (Max) @ Id, Vgs :
2 Ohm @ 50mA, 5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
0.4nC @ 4.5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
28.5pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
320mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-323
Kifurushi / Kesi :
SC-70, SOT-323
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