ON Semiconductor - FDG311N

KEY Part #: K6416166

FDG311N Bei (USD) [529955pcs Hisa]

  • 1 pcs$0.07014
  • 3,000 pcs$0.06979

Nambari ya Sehemu:
FDG311N
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 20V 1.9A SC70-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Viwango - RF and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDG311N electronic components. FDG311N can be shipped within 24 hours after order. If you have any demands for FDG311N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDG311N Sifa za Bidhaa

Nambari ya Sehemu : FDG311N
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 20V 1.9A SC70-6
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 115 mOhm @ 1.9A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 270pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 750mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SC-88 (SC-70-6)
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363