Nambari ya Sehemu :
FDG311N
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 20V 1.9A SC70-6
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
115 mOhm @ 1.9A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
270pF @ 10V
Kuondoa Nguvu (Max) :
750mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SC-88 (SC-70-6)
Kifurushi / Kesi :
6-TSSOP, SC-88, SOT-363