IXTX200N10L2 Bei (USD) [4590pcs Hisa]
- 1 pcs$10.43105
- 30 pcs$10.37916
- Nambari ya Sehemu:
- IXTX200N10L2
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 100V 200A PLUS247.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in IXYS IXTX200N10L2 electronic components. IXTX200N10L2 can be shipped within 24 hours after order. If you have any demands for IXTX200N10L2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTX200N10L2 Sifa za Bidhaa
Nambari ya Sehemu :
IXTX200N10L2
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 100V 200A PLUS247
Mfululizo :
Linear L2™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
200A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
11 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 3mA
Malango ya Lango (Qg) (Max) @ Vgs :
540nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
23000pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1040W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PLUS247™-3
Kifurushi / Kesi :
TO-247-3
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