IXTN32P60P Bei (USD) [3887pcs Hisa]
- 1 pcs$11.75821
- 10 pcs$11.69971
- Nambari ya Sehemu:
- IXTN32P60P
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET P-CH 600V 32A SOT227.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - SCR, Thyristors - SCRs - Moduli, Viwango - RF, Viwango - Bridge Rectifiers, Viwango - Rectifiers - Moja, Viwango - Rectifiers - Arrays and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in IXYS IXTN32P60P electronic components. IXTN32P60P can be shipped within 24 hours after order. If you have any demands for IXTN32P60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN32P60P Sifa za Bidhaa
Nambari ya Sehemu :
IXTN32P60P
Mzalishaji :
IXYS
Maelezo :
MOSFET P-CH 600V 32A SOT227
Mfululizo :
PolarP™
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
32A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
350 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
196nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
11100pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
890W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-227B
Kifurushi / Kesi :
SOT-227-4, miniBLOC
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