ON Semiconductor - FDD3860

KEY Part #: K6403384

FDD3860 Bei (USD) [176023pcs Hisa]

  • 1 pcs$0.21118
  • 2,500 pcs$0.21013

Nambari ya Sehemu:
FDD3860
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 100V 6.2A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDD3860 electronic components. FDD3860 can be shipped within 24 hours after order. If you have any demands for FDD3860, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD3860 Sifa za Bidhaa

Nambari ya Sehemu : FDD3860
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 100V 6.2A DPAK
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 36 mOhm @ 5.9A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1740pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.1W (Ta), 69W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D-PAK (TO-252AA)
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63